Patent Number: 6,294,815

Title: Semiconductor device

Abstract: A semiconductor device comprising a substrate having an insulating surface layer and an active layer comprising a semiconductor thin film formed thereon, wherein the substrate and the insulating surface layer in contact with the substrate each has at least one concave part, and the influence of the concave part is removed by conducting a flattening treatment and heat treatment of the undercoat film of the semiconductor thin film.

Inventors: Yamazaki; Shunpei (Tokyo, JP), Miyanaga; Akiharu (Kanagawa, JP), Mitsuki; Toru (Kanagawa, JP), Ohtani; Hisashi (Kanagawa, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

International Classification: H01L 21/02 (20060101); H01L 29/66 (20060101); H01L 21/336 (20060101); H01L 21/70 (20060101); H01L 29/786 (20060101); H01L 27/12 (20060101); H01L 21/84 (20060101); G02F 1/13 (20060101); G02F 1/1362 (20060101); H01L 027/01 (); H01L 027/12 (); H01L 031/039 ()

Expiration Date: 09/25/2018