Patent Number: 6,294,818

Title: Parallel-stripe type semiconductor device

Abstract: A semiconductor device has a drift region in which a drift current flows if it is in the ON mode and which is depleted if it is in the OFF mode. The drift region is formed as a structure having a plurality of first conductive type divided drift regions and a plurality of second conductive type compartment regions in which each of the compartment regions is positioned among the adjacent drift regions in parallel to make p-n junctions, respectively.

Inventors: Fujihira; Tatsuhiko (Kawasaki, JP)

Assignee: Fuji Electric Co., Ltd.

International Classification: H01L 29/66 (20060101); H01L 29/02 (20060101); H01L 29/08 (20060101); H01L 29/06 (20060101); H01L 29/739 (20060101); H01L 29/786 (20060101); H01L 29/10 (20060101); H01L 29/78 (20060101); H01L 29/808 (20060101); H01L 29/812 (20060101); H01L 029/76 (); H01L 029/94 (); H01L 031/062 (); H01L 031/113 (); H01L 031/119 ()

Expiration Date: 09/25/2018