Patent Number: 6,294,827

Title: Hybrid microwave-frequency integrated circuit

Abstract: In a microwave hybrid integrated circuit a metallized recess (8) is formed on the back or face side of a board (1) of the metallization of which recess serves as a bottom plate (6) of a capacitor (5), a remaining portion (9) of the board (1) under the recess (8) serves as the dielectric of the capacitor (5), and a top plate (7) thereof is situated on the face side of the board (1) and makes part of a topological metallization pattern (2), the remaining portion of the thickness of the board (1) in the recess (8) being of 1 to 400 .mu.m.

Inventors: Iovdalsky; Viktor Anatolievich (Fryazino, RU), Aizenberg; Eduard Volfovich (Fryazino, RU), Beil; Vladimir Iliich (Fryazino, RU), Lopin; Mikhail Ivanovich (Fryazino, RU)

Assignee: Samsung Electronics Co., Ltd.

International Classification: H01L 23/66 (20060101); H01L 23/58 (20060101); H05K 1/16 (20060101); H05K 1/02 (20060101); H01L 029/40 (); H01L 023/02 (); H01L 023/34 ()

Expiration Date: 09/25/2018