Patent Number: 6,294,829

Title: Multilayer quadruple gate field effect transistor structure for use in integrated circuit devices

Abstract: A quadruple gate field effect transistor (FET) is provided on the semiconductor-on-insulator or semiconductor-on-insulator (SOI) structure or a bulk semiconductor structure. The silicon substrate is surrounded by a polysilicon material on at least three sides to form a gate. Additionally, the substrate can be surrounded by a fourth side to form a quadruple gate structure. The SOI structure can be comprised of two layers of SOI structures. Interlayer vias can be provided to connect each layer of the two-layer structure.

Inventors: Liu; Yowjuang William (San Jose, CA)

Assignee: Advanced Micro Devices, Inc.

International Classification: H01L 21/70 (20060101); H01L 27/12 (20060101); H01L 21/84 (20060101); H01L 021/50 ()

Expiration Date: 09/25/2018