Patent Number: 6,294,832

Title: Semiconductor device having structure of copper interconnect/barrier dielectric liner/low-k dielectric trench and its fabrication method

Abstract: The present invention is related to a interconnection structure with Cu interconnects and low-k dielectric, in which a barrier dielectric liner made of a nitrogen-containing liquid-phase-deposition (LPD) fluorosilicate glass (FSG) film is used to replace a barrier metal layer and an oxide liner.

Inventors: Yeh; Ching-Fa (Hsinchu, TW), Lee; Yueh-Chuan (Hsinchu, TW), Wu; Kwo-Hau (Hsinchu, TW), Su; Yuh-Ching (Hsinchu, TW)

Assignee: National Science Council

International Classification: H01L 21/02 (20060101); H01L 23/532 (20060101); H01L 23/52 (20060101); H01L 21/768 (20060101); H01L 21/70 (20060101); H01L 21/316 (20060101); H01L 21/312 (20060101); H01L 023/48 (); H01L 021/476 ()

Expiration Date: 09/25/2018