Patent Number: 6,294,835

Title: Self-aligned composite insulator with sub-half-micron multilevel high density electrical interconnections and process thereof

Abstract: The present invention relates generally to a new sequence of methods and materials to improve the process yield and to enhance the reliability of multilevel interconnection with sub-half-micron geometry by making judicious use of composite insulators to prevent metal thinning over hard metal via plugs and by preventing process induced metal spike formation. The method takes advantage of the double damascene process. The metal spikes and the metal thinning resulting from over etch process is prevented in this method by using a pair of insulators which require different chemistries for etching.

Inventors: Dalal; Hormazdyar M. (Milton, NY), Nguyen; Du Binh (Danbury, CT), Rathore; Hazara S. (Stormville, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 23/52 (20060101); H01L 23/485 (20060101); H01L 21/768 (20060101); H01L 23/522 (20060101); H01L 21/70 (20060101); H01L 23/48 (20060101); H01L 023/48 ()

Expiration Date: 09/25/2018