Patent Number: 6,295,195

Title: Capacitor having first and second protective films

Abstract: The present invention provides a method of patterning top and bottom electrodes of a capacitor. The method comprises the steps of: selectively forming a first mask made of a first material which has a barrier property to hydrogen on a top electrode of the capacitor; selectively etching a top electrode layer and a capacitive dielectric film by use of the first mask; without removing the first mask from the top electrode, selectively forming a second mask made of a second material which has a barrier property to hydrogen so that the second mask covers the first mask, the top electrode and the capacitive dielectric film and also covers a bottom electrode layer; and selectively etching a bottom electrode layer.

Inventors: Maejima; Yukihiko (Tokyo, JP)

Assignee: NEC Corporation

International Classification: H01L 21/02 (20060101); H01L 21/768 (20060101); H01L 21/70 (20060101); H01G 004/00 ()

Expiration Date: 09/25/2018