Patent Number: 6,295,223

Title: Ferroelectric random access memory with a memory with a stable sensing margin

Abstract: Disclosed is a ferroelectric random access memory having a reference voltage supplying circuit with a capacitor coupling structure. The reference voltage supplying circuit including a coupling capacitor and switching transistors configured on the basis of the capacitor coupling structure. According to the reference voltage supplying circuit of the present invention, voltages on bit lines coupled to a ferroelectric memory cell and to the reference voltage supplying circuit, respectively, are simultaneously activated. Therefore, a stable sensing margin can be secured even though power noise arises during the read operation.

Inventors: Choi; Mun-Kyu (Kyunggi-do, KR), Jeon; Byung-Gil (Kyunggi-do, KR)

Assignee: Samsung Electronics Co., Ltd.

International Classification: G11C 11/22 (20060101); G11C 011/22 ()

Expiration Date: 09/25/2018