Patent Number: 6,297,519

Title: TFT substrate with low contact resistance and damage resistant terminals

Abstract: A conductive film made of Al or alloy containing Al as a main component is formed on an underlying substrate. An upper conductive film is disposed on the conductive film. A first opening is formed through the upper conductive film. An insulating film is disposed on the upper conductive film. A second opening is formed through the insulating film. An inner wall of the second opening is retreated from an inner wall of the first opening. An ITO film is formed covering a partial upper surface of the insulating film and inner surfaces of the first and second openings, and contacting a partial upper surface of the upper conductive film at a region inside of the second opening. Good electrical contact between an Al or Al alloy film and an ITO film can be established and productivity can be improved.

Inventors: Fujikawa; Tetsuya (Kawasaki, JP), Sukenori; Hidetoshi (Kawasaki, JP), Hayashi; Shougo (Kawasaki, JP), Tanaka; Yoshinori (Kawasaki, JP), Kihara; Masahiro (Kawasaki, JP)

Assignee: Fujitsu Limited

International Classification: H01L 21/70 (20060101); H01L 29/45 (20060101); H01L 27/12 (20060101); H01L 21/84 (20060101); H01L 29/40 (20060101); H01L 029/04 (); H01L 031/036 ()

Expiration Date: 10/02/2018