Patent Number: 6,297,524

Title: Multilayer capacitor structure having an array of concentric ring-shaped plates for deep sub-micron CMOS

Abstract: A capacitor structure having a first and at least a second conductor level of electrically conductive concentric ring-shaped lines. The conductive lines of the first and at least second levels are arranged in concentric ring-shaped stacks. A dielectric material is disposed between the first and second conductor levels and between the concentric conductive lines in each of the levels. At least one electrically conductive via electrically connects the conductive lines in each stack, thereby forming a concentric array of ring-shaped capacitor plates. The concentric array of capacitor plates are electrically connected in an alternating manner to first and second terminals of opposite polarity so that capacitance is generated between adjacent plates of the array. The capacitor structure is especially useful in deep sub-micron CMOS.

Inventors: Vathulya; Vickram (Ossining, NY), Sowlati; Tirdad (Ossining, NY)

Assignee: Philips Electronics North America Corporation

International Classification: H01L 21/02 (20060101); H01L 23/52 (20060101); H01L 23/522 (20060101); H01L 27/08 (20060101); H01G 004/30 ()

Expiration Date: 10/02/2018