Patent Number: 6,297,536

Title: Diode structure compatible with silicide processes for ESD protection

Abstract: A diode structure compatible with silicide processes for electrostatic discharge protection is disclosed. The diode structure comprises a semiconductor layer of a first conductivity type, a diffusion region of a second conductivity type formed in the semiconductor layer, and a doped region of the second conductivity type formed in the semiconductor layer around the diffusion region. The doped region has a doping concentration less than that of the diffusion region to provide a ballastic resistance under a high current stressing condition.

Inventors: Yu; Ta-Lee (Hsinchu Hsien, TW)

Assignee: Winbond Electronics Corp.

International Classification: H01L 29/66 (20060101); H01L 27/02 (20060101); H01L 27/08 (20060101); H01L 29/861 (20060101); H01L 033/00 ()

Expiration Date: 10/02/2018