Patent Number: 6,297,537

Title: Semiconductor device and method for production thereof

Abstract: A semiconductor device e.g. a gate array, a mask ROM or the like producedby supplementing one or more upper-layer interconnections to unitsselected out of those previously produced in a half-finished semiconductordevice, wherein the upper-layer interconnections are connected exclusivelywith the selected ones of the foregoing units and are isolated from theunselected ones of the foregoing units, by a space or an insulator layerproduced between the upper-layer interconnection and a layer in whichconductive paths are produced for connecting the upper-layerinterconnection and the foregoing units.

Inventors: Saito; Minoru (Tokyo, JP)


International Classification:

Expiration Date: 10/02/2013