Patent Number: 6,297,538

Title: Metal-insulator-semiconductor field effect transistor having an oxidized aluminum nitride gate insulator formed on a gallium nitride or silicon substrate

Abstract: A method for making a metal-insulator-semiconductor field effect transistor (MISFET) having an oxidized aluminum nitride gate insulator formed on a silicon or gallium nitride or other substrate. The method of making the MISFET comprises the steps of depositing an aluminum nitride layer on the entire upper surface of the silicon or gallium nitride or other substrate. Subsequently, the aluminum nitride layer is oxidized to convert it into an oxidized aluminum nitride layer which acts as a gate insulator of the MISFET. Portions of the oxidized aluminum nitride layer are etched to form a plurality of openings that expose regions to become the source and drain regions of the substrate. The source and drain regions are formed in the plurality of openings by conventional techniques including diffusion and ion-implantation. Finally, a metal layer is formed in the plurality of openings of the oxidized aluminum nitride layer, wherein the metal layer contacts the source and drain regions of the substrate.

Inventors: Kolodzey; James (Landenberg, PA), Olowolafe; Johnson (Bear, DE)

Assignee: The University of Delaware

International Classification: H01L 21/02 (20060101); H01L 21/336 (20060101); H01L 29/51 (20060101); H01L 21/28 (20060101); H01L 27/15 (20060101); H01L 29/40 (20060101); H01L 29/02 (20060101); H01L 29/20 (20060101); H01L 33/00 (20060101); H01L 029/76 (); H01L 029/94 (); H01L 031/062 (); H01L 031/113 (); H01L 031/119 ()

Expiration Date: 10/02/2018