Patent Number: 6,297,541

Title: Semiconductor device and method for fabricating the same

Abstract: The semiconductor device comprises a blocking layer 12 formed on a substrate 10, an insulation film 14 formed on the blocking layer 12, and a fuse 22 formed on the insulation film 14. The blocking layer 12 is formed below the fuse 22, whereby the fuse is disconnected by laser ablation, and the laser ablation can be stopped by the blocking layer 12 with good controllability without damaging the substrate. The fuses to be disconnected can be arranged at a very small pitch, which can improve integration of the fuse circuit.

Inventors: Ema; Taiji (Kawasaki, JP), Swenson; Edward J. (Portland, OR), Richardson; Thomas W. (Portland, OR), Sun; Yunlong (Portland, OR)

Assignee: Fujitsu Limited

International Classification: H01L 23/52 (20060101); H01L 23/525 (20060101); H01L 023/58 (); H01L 023/62 ()

Expiration Date: 10/02/2018