Patent Number: 6,297,544

Title: Semiconductor device and method for manufacturing the same

Abstract: A semiconductor device having power supply leads and signal leads on the main surface of a semiconductor chip. Since floating capacitance applied to the power supply leads can be made large and floating capacitance applied to the signal leads can be made small by making the interval between the signal leads and the semiconductor chip larger than the interval between the power supply leads and the semiconductor chip, the prevention of fluctuations in power source potential and the acceleration of the signal propagation speed can be carried out at the same time. As a result, the electric characteristics of the semiconductor device can be improved.

Inventors: Nakamura; Atsushi (Fuchu, JP), Katagiri; Mitsuaki (Koganei, JP), Tsubosaki; Kunihiro (Hino, JP), Nishimura; Asao (Kokubunji, JP), Masuda; Masachika (Tokorozawa, JP)

Assignee: Hitachi, Ltd.

International Classification: H01L 23/48 (20060101); H01L 23/495 (20060101); H01L 023/495 ()

Expiration Date: 10/02/2018