Patent Number: 6,297,552

Title: Commonly housed diverse semiconductor die

Abstract: A MOSFET die and a Schottky diode die are mounted on a common lead frame pad and their drain and cathode, respectively, are connected together at the pad. The pad has a plurality of pins extending from one side thereof. The lead frame has insulated pins on its opposite side which are connected to the FET source, the FET gate and the Schottky diode anode respectively by wire bonds. The lead frame and die are molded in an insulated housing and the lead frame pins are bent downwardly to define a surface-mount package.

Inventors: Davis; Christopher (Thousand Oaks, CA), Cheah; Chuan (El Segundo, CA), Kinzer; Daniel M. (El Segundo, CA)

Assignee: International Rectifier Corp.

International Classification: H01L 23/495 (20060101); H01L 23/48 (20060101); H01L 023/043 (); H01L 023/047 (); H01L 023/48 ()

Expiration Date: 10/02/2018