Patent Number: 6,297,555

Title: Method to obtain a low resistivity and conformity chemical vapor deposition titanium film

Abstract: A method of forming titanium nitride barrier layers that are highly conformal, have high step coverage and low resistivity through a two stage deposition process is described. Low temperature deposition of titanium nitride barrier layer provides material of high conformity and good step coverage but of high resistivity. High temperature deposition of titanium nitride barrier layer yields material of low resistivity. Thus, a titanium nitride barrier layer deposited in separate steps at low temperature and high temperature by the method of the present invention is particularly suited for use in modern devices of increasing density that are characterized by narrow and deep contact holes.

Inventors: Zhao; Joe W. (San Jose, CA), Hsia; Wei-Jen (Sunnyvale, CA), Catabay; Wilbur G. (Saratoga, CA)

Assignee: LSI Logic Corporation

International Classification: H01L 21/70 (20060101); H01L 21/768 (20060101); H01L 023/52 (); H01L 021/476 ()

Expiration Date: 10/02/2018