Patent Number: 6,297,556

Title: Electrically resistive structure

Abstract: An electrically resistive structure comprising a substrate (11) which is provided on at least one side with a first resistive film (13) and a second resistive film (17), the materials of these first and second films (13, 17) being mutually different, whereby an anti-diffusion film (15) is disposed between the first and second films (13, 17). The presence of such an anti-diffusion film (15) allows annealing of the resistive structure without significant degradation of its resistive properties. Suitable alloy materials for use in such an anti-diffusion film (15) include WTi, and particularly WTiN. Appropriate exemplary materials for the first resistive film (13) and second resistive film (17) include SiCr and CuNi alloys, respectively.

Inventors: Heger; Anton (Eindhoven, NL), Young; Edward W. A. (Eindhoven, NL)

Assignee: U.S. Philips Corporation

International Classification: H01C 7/00 (20060101); H01L 029/00 (); H01L 023/48 (); H01L 023/52 (); H01L 029/40 ()

Expiration Date: 10/02/2018