Patent Number: 6,297,557

Title: Reliable aluminum interconnect via structures

Abstract: Disclosed is an aluminum filled via hole for use in a semiconductor interconnect structure. The aluminum filled via hole of the semiconductor interconnect structure includes a first patterned metallization layer lying over a first dielectric layer. A second dielectric layer overlying the first patterned metallization layer and the first dielectric layer. An aluminum filled via hole defined through the second dielectric layer and in contact with the first patterned metallization layer. The aluminum filled via hole has an electromigration barrier cap over a topmost portion of the aluminum filled via hole that is substantially level with the second dielectric layer. The electromigration barrier cap having a thickness of between about 500 angstroms and about 2,500 angstroms.

Inventors: Bothra; Subhas (San Jose, CA)

Assignee: Philips Electronics North America Corp.

International Classification: H01L 21/70 (20060101); H01L 23/532 (20060101); H01L 23/52 (20060101); H01L 21/768 (20060101); H01L 23/522 (20060101); H01L 023/48 ()

Expiration Date: 10/02/2018