Patent Number: 6,297,586

Title: Cold-cathode power switching device of field-emission type

Abstract: Disclosed herein are a cold-cathode power switching device and a method of manufacturing the same. The device has a high voltage resistance and can be manufactured with high yield though its element area is large to control large currents. In the method, arrays of miniature emitters are prepared, and the emitter arrays are adhered to a conductive substrate having trenches. The conductive substrate is cut along the trenches, forming a plurality of substrates. The gaps between these substrates are filled with insulating resin. As a result, a multi-module power switching device for controlling large currents is manufactured with high yield. Further, cold-cathode modules, each having a gate pad, are arranged on a cathode electrode made of a conducive substrate, insulating strips are formed on the cathode electrode, gate lines are formed on the insulating strips, and the gate pads are connected to the gate lines. The electrons emitted from the modules can be controlled at a time. Each module may have a cathode pad connected to a cathode line. Depressions are made in those part of an anode electrode which oppose the gate pads and cathode pads, providing a sufficient insulation distance between each emitter and the anode electrode. Hence, a cold-cathode power switching device of field emission type can be provided which has a high voltage resistance.

Inventors: Nakayama; Kazuya (Sagamihara, JP), Sakai; Tadashi (Yokohama, JP), Sakuma; Naoshi (Yokohama, JP), Ono; Tomio (Yokohama, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01J 1/304 (20060101); H01J 21/10 (20060101); H01J 1/30 (20060101); H01J 21/00 (20060101); H01J 001/16 ()

Expiration Date: 10/02/2018