Patent Number: 6,297,594

Title: Plasma source ion implanting apparatus using the same

Abstract: A plasma source includes a magnetic field generating unit for generating within a plasma chamber a magnetic field B for electron cyclotron resonance, which has a direction crossing a direction in which the plasma is discharged through a plasma emission aperture. The plasma source is applied to an ion implanting apparatus.

Inventors: Sakai; Shigeki (Kyoto, JP), Takahashi; Masato (Kyoto, JP)

Assignee: Nissin Electric Co., LTD

International Classification: H01J 37/32 (20060101); H01J 007/24 ()

Expiration Date: 10/02/2018