Patent Number: 6,297,657

Title: Temperature compensated vertical pin probing device

Abstract: An improved vertical pin probing device is constructed using Invar, which substantially matches the coefficient of thermal expansion of the silicon wafer being probed. Spaced dies with Invar foils supporting the probe pins are coated with wear-resistant dielectric materials having lubricity to permit the probe pins to slide in the holes during probing.

Inventors: Thiessen; William F. (Newtown, CT), McQuade; Francis T. (Watertown, CT)

Assignee: Wentworth Laboratories, Inc.

International Classification: G01R 1/073 (20060101); G01R 001/073 ()

Expiration Date: 10/02/2018