Patent Number: 6,297,686

Title: Semiconductor integrated circuit for low-voltage high-speed operation

Abstract: For low-voltage and high-speed operation of a MOSFET in an integrated circuit, a small voltage is applied to a source node, causing slight forward bias of the source junction and thereby reducing its threshold voltage. Due to the combined effects of the bias at the source node and a body effect, the reduction in threshold voltage is larger than the absolute value of the source voltage being applied. A performance improvement over simply applying a bias voltage to the body (well) results. Detection of an event can be used to apply the performance boost to a critical path in the integrated circuit only when needed. Upon detection of a logic event, which determines that a signal will propagate through the critical path shortly thereafter, the source-node bias for circuit elements in the critical path can be adjusted in time for a speed improvement. However, the source remains at another potential when no signal is passing through the critical-path, to save power when not boosting speed.

Inventors: Lin; Shi-Tron (Taipei, TW), Peng; Yung-Chow (Hsinchu, TW)

Assignee: Winbond Electronics Corporation

International Classification: H01L 29/66 (20060101); H01L 29/786 (20060101); H01L 27/085 (20060101); H01L 27/092 (20060101); H03K 19/00 (20060101); H03K 19/017 (20060101); H03K 19/01 (20060101); H03K 003/01 ()

Expiration Date: 10/02/2018