Patent Number: 6,297,983

Title: Reference layer structure in a magnetic storage cell

Abstract: A magnetic storage cell includes an active layer and a reference layer which is structured to minimize disruptions to magnetization in its active layer. The reference layer is structured so that a pair of its opposing edges overlap a pair of corresponding edges of the active layer. This may be used minimize the effects of demagnetization fields on the active layer. In addition, the reference layer may be thinned at its opposing edges to control the effects of coupling fields on the active layer and balance the demagnetization field.

Inventors: Bhattacharyya; Manoj (Cupertino, CA)

Assignee: Hewlett-Packard Company

International Classification: G11C 11/16 (20060101); G11C 11/02 (20060101); G11C 007/02 ()

Expiration Date: 10/02/2018