Patent Number: 6,297,985

Title: Cell block structure of nonvolatile ferroelectric memory

Abstract: Cell block structure of a nonvolatile ferroelectric memory is provided thatcan reduce loading on a bitline and simplify sense amplifier blockarrangement and design. The nonvolatile ferroelectric memory can include acell array block having split wordlines controlled by a wordline driverand a cell block selection switching unit that separates the cell arrayblock into a first region and a second region. Each switch in the cellblock selection switching unit is selectively coupled to a bitline for thefirst region and a bitline for the second region. First and second senseamplifier arrays sense a data from a cell array either in the first regionor the second region selected by the cell block selection switching unit.

Inventors: Kang; Hee Bok (Daejeon-si, KR)


International Classification:

Expiration Date: 10/02/2013