Patent Number: 6,297,991

Title: Nonvolatile semiconductor memory device

Abstract: A flash memory includes a programming section for programming one or more of memory cells at a time. The output node of the undoped programming transistor in the programming section is maintained at substantially constant irrespective of the number of the cell transistors being programmed at a time. The programming section has a voltage follower scheme including a differential amplifier and the programming transistor.

Inventors: Ozoe; Hidetoshi (Kanagawa, JP)

Assignee: NEC Corporation

International Classification: G11C 16/10 (20060101); G11C 16/06 (20060101); G11C 016/06 ()

Expiration Date: 10/02/2018