Patent Number: 6,297,993

Title: Acceleration voltage implementation for a high density flash memory device

Abstract: The reduction of electrical noise in a high voltage distribution path of a high density flash memory device is disclosed. High voltage brought on-chip from an external power source is transmitted over separate isolated voltage distribution paths to a voltage generator circuit. The voltage generator pumps up the voltage of one of the voltage paths and uses the pumped up voltage to control the distribution of the voltage from the other voltage path, whereby electrical noise from the voltage pump is isolated from the distributed voltage.

Inventors: Chen; Johnny C. (Cupertino, CA), Kasa; Yasushi (Kawasaki, JP), Pham; Trung S. (Fremont, CA)

Assignee: Advanced Micro Devices, Inc.

International Classification: G11C 5/14 (20060101); G11C 16/06 (20060101); G11C 16/30 (20060101); G11C 016/04 ()

Expiration Date: 10/02/2018