Patent Number: 6,297,994

Title: Single electron MOSFET memory device and method

Abstract: A memory device and related methods are described. The memory deviceincludes a plurality of cells, each cell including a MOSFET having asource coupled to a first end of a channel, a drain coupled to a secondend of the channel, a gate formed on a gate insulator and extending fromthe source to the drain and a plurality of conductive islands, eachsurrounded by an insulator, formed in the channel. The islands have amaximum dimension of three nanometers. The surrounding insulator has athickness of between five and twenty nanometers. Each island andsurrounding insulator is formed in a pore extending into the channel. As aresult, the memory cells are able to provide consistent, externallyobservable changes in response to the presence or absence of a singleelectron on the island.

Inventors: Ahn; Kie (Chappaqua, NY), Forbes; Leonard (Corvallis, OR)


International Classification:

Expiration Date: 10/02/2013