Patent Number: 6,298,077

Title: GaInAsP/AIGaInP laser diodes with AIGaAs type II carrier blocking layer in the waveguide

Abstract: A GaInAsP/AR GaInP laser diode is provided with an AlGaAs type II carrier blocking layer in the waveguide of the diode. The resulting diode exhibits a relatively low threshold current, an increased slope efficiency and characteristic T0 and T1, for the diodes are less limited by carrier leakage.

Inventors: He; Xiauguang (Tucson, AZ)

Assignee: Opto Power Corporation

International Classification: H01S 5/20 (20060101); H01S 5/00 (20060101); H01S 5/343 (20060101); H01S 005/323 ()

Expiration Date: 10/02/2018