Patent Number: 6,305,314

Title: Apparatus and concept for minimizing parasitic chemical vapor depositionduring atomic layer deposition

Abstract: A new method and apparatus for avoiding contamination of films deposited inlayered depositions, such as Atomic Layer Deposition (ALD) and othersequential chemical vapor deposition (CVD) processes, is taught, whereinCVD-deposited contamination of ALD films is prevented by use of apre-reaction chamber that effectively causes otherwise-contaminatinggaseous constituents to deposit on wall elements of gas-delivery apparatusprior to entering the ALD chamber.

Inventors: Sneh; Ofer (Mountain View, CA), Galewski; Carl J. (Aromas, CA)

Assignee:

International Classification:

Expiration Date: 10/23/2013