Patent Number: 6,305,316

Title: Integrated power oscillator RF source of plasma immersion ion implantation system

Abstract: A wafer processing system is provided. The system includes a wafer handling system for introducing semiconductor wafers into a processing chamber. An oscillator is operatively coupled to an antenna for igniting a plasma within the processing chamber. The plasma and antenna form a resonant circuit with the oscillator, and the oscillator varies an output characteristic associated therewith based on a load change in the resonant circuit during plasma ignition.

Inventors: DiVergilio; William F. (Beverly, MA), Kellerman; Peter L. (Essex, MA), Ryan; Kevin T. (Wilmington, MA)

Assignee: Axcelis Technologies, Inc.

International Classification: H01J 37/32 (20060101); C23C 016/00 (); H05H 001/00 (); H05H 001/46 ()

Expiration Date: 10/23/2018