Patent Number: 6,308,400

Title: Method for achieving anti-parallel exchange coupling with one biased layer having low coercivity

Abstract: A method of forming a DSMR head comprises the steps of forming a first ferromagnetic (FM) strip on a substrate with a first anti-FM (AFM) pinning layer over a portion of the first ferromagnetic strip, the first AFM pinning layer being composed of a first material. Then perform a first high temperature annealing step. Form a non-magnetic layer over the strip and the pinning layer. Then form a second FM strip on the non-magnetic layer, and form a second AFM pinning layer over a portion of the second FM strip, with a second AFM pinning layer being composed identically of the first material. Perform a second high temperature annealing step on the first and second FM strips and the first and second pinning layers and the intermediate non-magnetic layer in the presence of a second magnetic field antiparallel to the first magnetic field. A head with NiFe FM strips and FeMn or MnPt, etc, AFM layers for both strips is provided.

Inventors: Liao; Simon H. (Fremont, CA), Li; Min (Fremont, CA)

Assignee: Headway Technologies, Inc.

International Classification: G11B 5/39 (20060101); G11B 5/31 (20060101); G11B 005/31 (); H04R 021/00 ()

Expiration Date: 10/30/2018