Patent Number: 6,309,458

Title: Method for fabricating silicon thin film

Abstract: This invention provides a method for fabricating a silicon thin film which is high in supply efficiency of silicon material. In the method for fabricating a silicon thin film by placing a silicon semiconductor single crystal substrate in a process vessel and by supplying a silicon material into the process vessel, a wall of the process vessel is cooled so that silicon tetrachloride (SiCl.sub.4) concentration in an exhaust gas discharged from the process vessel during a growth process of a silicon thin film becomes equal to or lower than 1/10 of a concentration of the silicon material in the exhaust gas. Also, the wall of the process vessel is cooled so that temperature gradient between a surface of the semiconductor single crystal substrate and the wall of the process vessel satisfies the following Equation (1) in relation to a temperature of the semiconductor single crystal substrate:

Inventors: Habuka; Hitoshi (Annaka, JP), Akiyama; Shoji (Annaka, JP), Otsuka; Toru (Annaka, JP)

Assignee: Shin-Etsu Handotai Co., Ltd.

International Classification: C23C 16/22 (20060101); C23C 16/44 (20060101); C30B 25/02 (20060101); C23C 16/24 (20060101); C30B 025/14 ()

Expiration Date: 10/30/2018