Patent Number: 6,309,515

Title: Sputtering apparatus for sputtering high melting point metal and method for manufacturing semiconductor device having high melting point metal

Abstract: There is provided a method for manufacturing a semiconductor device for forming a silicide layer of metal of high melting point, wherein the metal of high melting point is processed in sputtering under a condition in which no deterioration is produced by the sputtering apparatus. There is also provided a sputtering apparatus for manufacturing semiconductor device. In the method of the present invention, a high melting point metal is accumulated on a silicon substrate formed with a gate electrode of a semiconductor element to form a metallic film of high melting point, thereafter it is heat treated to form a silicide layer of the high melting point metal at an interface layer with the metallic film with high melting point, and in this case, the metallic film of high melting point is accumulated in sputtering by a magnetron sputtering device under a condition in which an electrical load amount Q reaching to the gate electrode is less than 5 C/cm.sup.2. In addition, the sputtering apparatus 30 has the collimator plate 32 including an electrical conductive material having many through-pass holes passed from the target toward the wafer between the target holder 16 and the wafer holder 14 while it is being connected to an earth terminal.

Inventors: Inoue; Ken (Tokyo, JP), Abiko; Hitoshi (Tokyo, JP), Higuchi; Minoru (Tokyo, JP)

Assignee: NEC Corporation

International Classification: C23C 14/35 (20060101); H01L 21/02 (20060101); H01L 21/285 (20060101); C23C 014/34 (); H01L 021/44 ()

Expiration Date: 10/30/2018