Patent Number: 6,309,593

Title: Refractory metal silicide target, method of manufacturing the target, refractory metal silicide thin film, and semiconductor device

Abstract: A refractory metal silicide target is characterized by comprising a fine mixed structure composed of MSi.sub.2 (where M: refractory metal) grains and Si grains, wherein the number of MSi.sub.2 grains independently existing in a cross section of 0.01 mm.sup.2 of the mixed structure is not greater than 15, the MSi.sub.2 grains have an average grain size not greater than 10 .mu.m, whereas free Si grains existing in gaps of the MSi.sub.2 grains have a maximum grain size not greater than 20 .mu.m. The target has a high density, high purity fine mixed structure with a uniform composition and contains a small amount of impurities such as oxygen etc. The employment of the target can reduce particles produced in sputtering, the change of a film resistance in a wafer and the impurities in a film and improve yield and reliability when semiconductors are manufactured.

Inventors: Sato; Michio (Yokohama, JP), Yamanobe; Takashi (Yamato, JP), Komatsu; Tohru (Yokosuka, JP), Fukasawa; Yoshiharu (Yokohama, JP), Yagi; Noriaki (Yokohama, JP), Maki; Toshihiro (Yokohama, JP), Shizu; Hiromi (Fujisawa, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: C23C 14/34 (20060101); B23F 003/14 ()

Expiration Date: 10/30/2018