Patent Number: 6,309,766

Title: Polycrystalline silicon carbide ceramic wafer and substrate

Abstract: A substrate made of polycrystalline .beta.SiC and having an essentially pore free surface is disclosed. The substrate is adapted for use as a wafer component to support different thinfilms as part of manufacturing for discrete or integrated circuit electronic devices. The substrate comprises a polycrystalline silicon carbide outer surface with {111} crystal planes exposed on the working surface, the outer surface is essentially pore free or without exposed pores, scratches, steps or other such depressions or discontinuities on the surface of the substrate having at least one dimension larger than 2.54 microns, and no non-stoichiometric silicon or carbon other than that which may be residual from the process of making silicon carbide ceramic material.

Inventors: Sullivan; Thomas M. (Indianapolis, IN)

Assignee:

International Classification: G11B 21/16 (20060101); G11B 33/02 (20060101); G11B 5/73 (20060101); G11B 25/04 (20060101); G11B 5/72 (20060101); G11B 5/00 (20060101); G11B 5/187 (20060101); G11B 5/10 (20060101); G11B 5/48 (20060101); G11B 17/02 (20060101); G11B 5/82 (20060101); G11B 17/038 (20060101); G11B 5/62 (20060101); H01L 21/02 (20060101); G11B 5/74 (20060101); H01L 23/12 (20060101); H01L 21/04 (20060101); H01L 23/15 (20060101); B32B 019/00 ()

Expiration Date: 10/30/2018