Patent Number: 6,309,895

Title: Method for fabricating capacitor containing amorphous and polycrystalline ferroelectric films and method for forming amorphous ferroelectric film

Abstract: A preparation for forming a thin film capacitor includes forming an amorphous ferroelectric film, such as barium strontium titanate [(Ba,Sr)TiO.sub.3 ] film, for use as an interface between a metal electrode and a polycrystalline ferroelectric film, such as (Ba,Sr) TiO.sub.3 film. The polycrystalline ferroelectric film serves as a dielectric layer of the thin film capacitor in view of the fact that the polycrystalline ferroelectric film has a high dielectric constant. The amorphous ferroelectric film serves as a buffer layer for inhibiting the leakage current of the thin film capacitor. The amorphous ferroelectric film is grown by sputtering and by introducing a working gas, such as argon, and a reactive gas, such as oxygen, into a reaction chamber in which a plasma is generated at room temperature.

Inventors: Jaing; Cheng-Chung (Hsinchu, TW), Chen; Jyh-Shin (Hsinchu, TW), Chyi; Jen-Inn (Chung-Li, TW), Sheu; Jeng-Jiing (Chung-Li, TW)

Assignee: Precision Instrument Development Center, National Science Council

International Classification: C23C 14/08 (20060101); H01L 21/02 (20060101); H01G 007/06 ()

Expiration Date: 10/30/2018