Patent Number: 6,309,896

Title: Method of manufacturing a ferroelectric film

Abstract: A perovskite crystallized ferroelectric substance is formed over a lowerelectrode. A precursor solution, which serves as a ferroelectric film, isapplied thereto and dried, followed by low-temperature anneal under thecondition of a perovskite crystallization temperature or lower. Further,an upper electrode is formed and thereafter subjected to high-temperatureanneal at a temperature of the perovskite crystallization temperature orhigher to thereby perfectly crystallize the ferroelectric film, whereby asemiconductor element interposed between the electrodes can be formed.

Inventors: Kanehara; Takao (Tokyo, JP)


International Classification:

Expiration Date: 10/32013