Patent Number: 6,309,898

Title: Method for manufacturing semiconductor device capable of improving manufacturing yield

Abstract: In a method for manufacturing a semiconductor device, probe pads are formed simultaneously with formation of an intermediate conductive layer, and a test operation is performed upon the semiconductor device by placing probes on the probe pads. Then, post-stage processes are performed upon the semiconductor device in accordance with characteristics of the semiconductor device obtained by the test operation.

Inventors: Kayashima; Yuji (Tokyo, JP)

Assignee: NEC Corporation

International Classification: H01L 21/66 (20060101); H01L 23/58 (20060101); H01L 021/66 ()

Expiration Date: 10/30/2018