Patent Number: 6,309,905

Title: Stripe photodiode element with high quantum efficiency for an image sensor cell

Abstract: A method of fabricating a stripe photodiode element, for an image sensor cell, has been developed. The stripe photodiode element is comprised of a narrow width, serpentine shaped, lightly doped N type region, in a P well region. The use of the serpentine shaped region results in increased photon collection area, when compared to counterparts fabricated using non-serpentine shaped patterns. In addition the use of the serpentine shaped N type regions allow both vertical, as well as horizontal depletion regions, to result, thus increasing the quantum efficiency of the photodiode element. The combination of narrow width, and a reduced dopant level, for the N type serpentine shaped region, result in a fully depleted photodiode element.

Inventors: Yaung; Dun-Nian (Taipei, TW), Wuu; Shou-Gwo (Hsinchu, TW), Tseng; Chien-Hsien (Hsinchu, TW)

Assignee: Taiwan Semiconductor Manufacturing Company

International Classification: H01L 31/103 (20060101); H01L 27/146 (20060101); H01L 31/0352 (20060101); H01L 31/102 (20060101); H01L 31/0248 (20060101); H01L 021/00 ()

Expiration Date: 10/30/2018