Patent Number: 6,309,926

Title: Thin resist with nitride hard mask for gate etch application

Abstract: A method of forming a gate structure is provided. In the method, a nitride layer is formed on a gate material layer. An ultra-thin photoresist layer is formed on the nitride layer. The ultra-thin photoresist layer is patterned with short wavelength radiation to define a pattern for the gate. The ultra-thin photoresist layer is used as a mask during a first etch step to transfer the gate pattern to the nitride layer. The first etch step includes an etch chemistry that is selective to the nitride layer over the ultra-thin photoresist layer. The nitride layer is used as a hard mask during a second etch step to form the gate by transferring the gate pattern to the gate material layer via the second etch step.

Inventors: Bell; Scott A. (San Jose, CA), Lyons; Christopher F. (Fremont, CA), Levinson; Harry J. (Saratoga, CA), Nguyen; Khanh B. (San Mateo, CA), Wang; Fei (San Jose, CA), Yang; Chih Yuh (San Jose, CA)

Assignee: Advanced Micro Devices

International Classification: H01L 21/70 (20060101); H01L 21/02 (20060101); H01L 21/027 (20060101); H01L 27/115 (20060101); H01L 21/3213 (20060101); H01L 21/8247 (20060101); H01L 21/311 (20060101); H01L 021/824 ()

Expiration Date: 10/30/2018