Patent Number: 6,309,932

Title: Process for forming a plasma nitride film suitable for gate dielectric application in sub-0.25 .mu.m technologies

Abstract: A process for forming a layered gate dielectric structure which suppresses boron diffusion and provides a gate dielectric structure which is resistant to charge trapping, pinhole-free, and which does not introduce mobility or drive current problems. The process for forming the layered gate dielectric structure includes plasma enhanced chemical vapor deposition of a structurally deficient nitride film and an annealing process which converts the originally deposited film to either an oxynitride film or a stoichiometric nitride film.

Inventors: Ma; Yi (Orlando, FL), Roy; Pradip K. (Orlando, FL)

Assignee: Agere Systems Guardian Corp

International Classification: H01L 21/02 (20060101); H01L 29/51 (20060101); H01L 21/28 (20060101); H01L 29/40 (20060101); H01L 21/314 (20060101); H01L 021/336 (); H01L 021/31 ()

Expiration Date: 10/30/2018