Patent Number: 6,309,934

Title: Fully self-aligned high speed low power MOSFET fabrication

Abstract: Channel doping and gate lithography are simulatneously performed byfocusing an ion beam into the wafer through a positive or negativephotoresist that is sensitive to the ion beam. Additional fabrication isthen performed to provide a gate that is self-aligned with the dopedchannel.

Inventors: Peckerar; Marty (Silver Spring, MD), Wang; Weizhong (Sunnyvale, CA), Melngailis; John (Chevy Chase, MD)


International Classification:

Expiration Date: 10/32013