Patent Number: 6,309,938

Title: Deuterated bipolar transistor and method of manufacture thereof

Abstract: A bipolar transistor and a method of manufacturing the transistor. The transistor includes: (1) a substrate having a base region, an emitter region and a base-emitter junction between said base and emitter regions and (2) a substantial concentration of an isotope of hydrogen located in said biploar transistor.

Inventors: Kizilyalli; Isik C. (Orlando, FL)

Assignee: Agere Systems Guardian Corp.

International Classification: H01L 29/02 (20060101); H01L 21/30 (20060101); H01L 21/02 (20060101); H01L 29/66 (20060101); H01L 29/732 (20060101); H01L 29/16 (20060101); H01L 21/331 (20060101); H01L 021/331 (); H01L 021/322 ()

Expiration Date: 10/30/2018