Patent Number: 6,309,945

Title: Process for producing semiconductor substrate of SOI structure

Abstract: A process for producing a semiconductor substrate comprises the steps offorming a porous layer in a first substrate comprising monocrystallinesilicon; forming a protective film on a side wall of the pores of theporous layer; forming a nonporous monocrystalline silicon layer on theporous layer; bonding the surface of the nonporous monocrystalline siliconlayer onto a second substrate with interposition of an insulating layer;and etching off selectively the porous layer by use of a chemical etchingsolution.

Inventors: Sato; Nobuhiko (Yokohama, JP), Yonehara; Takao (Atsugi, JP)


International Classification:

Expiration Date: 10/32013