Patent Number: 6,309,951

Title: Method for crystallizing amorphous silicon

Abstract: A method of crystallizing an amorphous film comprises the steps of forming an amorphous film capable of being crystallized on a substrate, the amorphous film being in contact with a Co thin film, and crystallizing the amorphous film by forming and electric field in the amorphous film and the Co thin film, while simultaneously subjecting the amorphous film and the Co thin film to a thermal treatment, thereby crystallizing the amorphous film.

Inventors: Jang; Jin (Seoul, KR), Park; Jong-Kab (Seoul, KR)

Assignee: LG. Philips LCD Co., Ltd.

International Classification: H01L 21/02 (20060101); H01L 21/20 (20060101); H01L 21/285 (20060101); H01L 21/336 (20060101); H01L 021/36 (); H01L 021/84 ()

Expiration Date: 10/30/2018