Patent Number: 6,309,953

Title: Process for producing a semiconductor device with a roughened semiconductor surface

Abstract: A process for producing a semiconductor device includes the following sequential steps: producing a semiconductor body having an Al.sub.x Ga.sub.1-x As layer with an upper surface, where x.ltoreq.0.40; applying a contact metallization made of a non-noble metallic material to the Al.sub.x Ga.sub.1-x As layer; precleaning a semiconductor surface to produce a hydrophilic semiconductor surface; roughening the upper surface of the Al.sub.x Ga.sub.1-x As layer by etching with an etching mixture of hydrogen peroxide .gtoreq.30% and hydrofluoric acid .gtoreq.40% (1000:6) for a period of from 1 to 2.5 minutes; and re-etching with a dilute mineral acid. According to another embodiment, 0.ltoreq.x.ltoreq.1 and the upper surface of the Al.sub.x Ga.sub.1-x As layer is roughened by etching with nitric acid 65% at temperatures of between 0.degree. C. and 30.degree. C.

Inventors: Fischer; Helmut (Regensburg, DE), Lang; Gisela (Regensburg, DE), Sedlmeier; Reinhard (Neutraubling, DE), Nirschl; Ernst (Wenzenbach, DE)

Assignee: Siemens Aktiengesellschaft

International Classification: H01L 29/02 (20060101); H01L 29/06 (20060101); H01L 33/00 (20060101); H01L 021/28 ()

Expiration Date: 10/30/2018