Patent Number: 6,309,955

Title: Method for using a CVD organic barc as a hard mask during via etch

Abstract: A method for forming a via of a metal interconnect structure in a semiconductor device employs a CVD organic BARC between a low k dielectric material and a via photoresist mask. The CVD organic BARC is deposited over the low k dielectric film and protects the film during formation and patterning of the via photoresist mask. Furthermore, the presence of the BARC permits the photoresist mask to be thinner than that used in conventional techniques thereby improving lithography resolution.

Inventors: Subramanian; Ramkumar (San Jose, CA), Wang; Fei (San Jose, CA), Lukanc; Todd P. (San Jose, CA), Okada; Lynne A. (Sunnyvale, CA)

Assignee: Advanced Micro Devices, Inc.

International Classification: H01L 21/70 (20060101); H01L 21/768 (20060101); H01L 021/476 ()

Expiration Date: 10/30/2018