Patent Number: 6,309,956

Title: Fabricating low K dielectric interconnect systems by using dummy structures to enhance process

Abstract: The present invention relates to semiconductor devices. More specifically, the invention discloses the use of dummy structures to improve thermal conductivity, reduce dishing and strengthen layers formed with low dielectric constant materials.

Inventors: Chiang; Chien (Fremont, CA), Fraser; David B. (Danville, CA), Mack; Anne S. (Saratoga, CA), Lee; Jin (Mountain View, CA), Tzeng; Sing-Mo (Hsuinchu, TW), Pan; Chuanbin (San Jose, CA), Ochoa; Vicky (Pleasanton, CA), Marieb; Thomas (San Francisco, CA), Fang; Sychyi (Palo Alto, CA)

Assignee: Intel Corporation

International Classification: H01L 21/70 (20060101); H01L 21/768 (20060101); H01L 021/28 ()

Expiration Date: 10/30/2018