Patent Number: 6,309,958

Title: Semiconductor device and method of manufacturing the same

Abstract: In a semiconductor device, adjacent ones of aluminum wirings are electrically isolated from each other through an interlayer insulation film containing a void space portion which is disposed between the adjacent ones of the aluminum wirings in a condition in which the void space portion makes its lower surface substantially flush with a lower surface of each of the aluminum wirings. A trench is formed between the adjacent ones of the aluminum wirings in an upper surface of a semiconductor substrate. Each of the trench and the aluminum wirings has its side surfaces covered with a damage preventing silicon oxide film, i.e., side-wall insulation film which is used to form the trench. The trench is filled with the interlayer insulation film.

Inventors: Okada; Norio (Tokyo, JP)

Assignee: NEC Corporation

International Classification: H01L 23/52 (20060101); H01L 21/70 (20060101); H01L 23/522 (20060101); H01L 21/768 (20060101); H01L 021/476 ()

Expiration Date: 10/30/2018